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| VDRM VRRM ITGQM VT0 rT = = = = = 6000 6000 800 3.25 6.4 V V A V m Reverse Blocking Integrated Gate-Commutated Thyristor 5SHZ 08F6000 Doc. No. 5SYA1231-01 Sep. 01 * Optimized for current source inverter (CSI) * Fast response (tdon < 3 s, tdoff < 7 s) * Precise timing (tdoff < 400 ns) * Direct fiber optic control * Status feedback * Cosmic radiation withstand rating * Very high EMI immunity Blocking VDRM VRRM IDRM IRRM VAC Repetitive peak off-state voltage Reverse repetitive peak off-state voltage Repetitive peak off-state current Reverse repetitive peak off-state current Max. AC voltage for 100 FIT failure rate (see Fig. 8) min. max. 12 kN 16 kN 47 mm 26 mm 1.00 kg 33 mm 13 mm 250 mm 44 mm 208 mm +0/-0.5 mm 1.0 mm +0/-0.5 mm 0.1 mm 0.5 mm 6000 V 6000 V 50 mA 50 mA 3600 V VD = VDRM VR = VRRM 0 Tjop 125 C. Ambient cosmic radiation at sea level in open air. Mechanical data Fm Dp H m DS Da l h w Mounting force Pole-piece diameter Housing thickness Weight IGCT Surface creepage distance Air strike distance Length IGCT Height IGCT Width IGCT ABB Semiconductors AG reserves the right to change specifications without notice. 5SHZ 08F6000 On-state ITAVM ITRMS VT VT0 rT (see Fig. 2) 290 A 450 A 8.40 V 3.25 V 6.4 m Half sine wave, TC = 85 C IT IT = = 800 A 200 - 800 A Tj = 125 C Max. average on-state current Max. RMS on-state current On-state voltage Threshold voltage Slope resistance Self commutation (VD > 0 V) Turn-on switching (see Fig. 3, 10, 11) di/dtcrit ton (min) tdon tr Eon Max. rate of rise of on-state current Min. on-time Turn-on delay time Rise time Turn-on energy per pulse 1300 A/s 10 s 3 s 1.5 s 0.8 J VD IT RS CS = = = = 3000 V 800 A 10 0.1 F Tj = 125 C 500 A/s 6 H 350 nH Tj = 0...125 C di/dt = Lcomm = LS = Turn-off switching (see Fig. 4, 6, 10, 11) ITGQM toff (min) tf tdoff Eoff Max. contr. turn-off current Min. off-time Fall time Turn-off delay time Turn-off energy per pulse 800 A 10 s 4.0 s 7.0 s 7.2 J VD RS CS = 3000 V 800 A 10 0.1 F Tj = 125 C Tj = 0...125 C ITGQ = = = VDM VDRM Lcomm = LS = 6 H 350 nH Load commutation (VD < 0 V) Turn-off switching (see Fig. 5, 6, 10, 11) di/dtcrit Irr Qrr Err Max. rate of rise of on-state current Reverse recovery current Reverse recovery charge Turn off energy per pulse 1300 A/s 750 A 1500 C 6.0 J Tj VD IT RS CS = 0...125 C = = = = -3000 V 800 A 10 0.1 F Tj = 125 C 500 A/s 6 H 350 nH di/dt = Lcomm = LS = VRM VRRM ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 3 of 8 5SHZ 08F6000 Gate Unit Gate Unit Power supply (see Fig. 7 to 10) VGDC PGin X1 Pon CS Poff CS Pon SF Poff SF tGLITCH CS SF Gate Unit supply voltage Gate Unit power consumption Gate Unit power connector Optical input power Optical noise power Optical output power Optical noise power Pulse width threshold Receiver for command signal Transmitter for status feedback Power supply voltage ok Gate-cathode interface ok Off gated Off gated Not ready (failure) 20 0.5 VDC 58 W Without galvanic isolation to power circuit. fS = 750 Hz, ITGQ = 400 A, = 0.33 Phoenix, Type MSTB 2.5/2-G-5.08 Au Note 1 > < > < -20 dBm -45 dBm Valid for 1mm plastic optical fibre -15 dBm (POF) -50 dBm Max. pulse width without response Optical control input/output (see Fig. 8 to 10) 400 ns Agilent, Type HFBR-2528 Note 2 Agilent, Type HFBR-1528 Note 2 "Light" when power supply is within specified rang "Light" when no short circuit, no open and mouning force is applied. "Light" when gate-current is flowing "Light" when GCT is off (optional) Visual feedback (see Fig. 8, 9) LED1 (green) LED2 (green) LED3 (yellow) LED4 (red) LED5 (red) Note 1: Phoenix Contact, www.phoenixcontact.com Note 2: Agilent Technologies, www.semiconductor.agilent.com ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 4 of 8 5SHZ 08F6000 Thermal Tj Tstg Tamb RthJC RthCH Operating junction temperature range Storage temperature range Ambient operational temperature range Thermal resistance junction to case Thermal resistance case to heatsink 0...125 C -40...60 C 0...60 C 23 K/kW 7.5 K/kW Double side cooled Double side cooled Analytical function for transient thermal impedance: Z thJC (t) = a R (1 - e i 4 - t /i ) i Ri (K/kW) i (s) 1 15.5 0.57 2 3.35 0.087 3 2.92 0.013 4 1.17 0.0035 i=1 ZthJC [K/kW] Fm = 12...16 kN Double side cooled 25 20 15 10 5 0 10-3 2 3 4 5 6 78 10-2 2 3 4 5 6 78 10-1 2 3 4 5 6 78 100 2 3 4 5 6 78 101 t [s] Fig. 1 Transient thermal impedance (junction-to-case) vs. time (max. values). ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 5 of 8 5SHZ 08F6000 Eon [J] 1.2 Tj = 125C Tj = 25C 1000 IT [A] 1200 Tj = 125 C 1.0 VD = 3000V 800 0.8 VD = 2000V 600 0.6 400 0.4 VD = 1000V 200 0.2 0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VT [V] 0.0 0 200 400 600 800 1000 IT [A] Fig. 2 On-state characteristics. Fig. 3 Turn-on energy per pulse Self commutation (VD > 0 V) Eoff [A] 8.0 Tj = 125 C Err [J] 8.0 Tj = 125 C VD = 3000V 7.0 7.0 VD = 3000V 6.0 VD = 2000V 6.0 5.0 5.0 4.0 VD = 1000V 4.0 VD = 2000V 3.0 3.0 2.0 2.0 VD = 1000V 1.0 1.0 0.0 0 200 400 600 800 1000 ITGQ [A] 0.0 0 200 400 600 800 1000 IT [A] Fig. 4 Turn-off energy per pulse Self commutation (VD > 0 V). Fig. 5 Turn-off energy per pulse Load commutation (VD < 0 V). ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 6 of 8 5SHZ 08F6000 ITGQ [A] 900 800 700 600 500 40 400 30 300 200 100 0 0 1000 2000 3000 4000 20 fs = 250 Hz Tj = 0..125 C V DM V DRM V RM V RRM Lcomm = 3...6H Cs = 0.1 F Rs = 5...10 PGin [W] 80 duty cycle = 0.33 VD > 0 V 70 fs = 1000 Hz 60 fs = 750 Hz 50 10 0 0 100 200 300 400 VD [V] ITGQ [A] Fig. 6 Max. repetitive turn-off current. Fig. 7 Gate Unit power consumption. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 7 of 8 5SHZ 08F6000 Fig. 8 Device Outline Drawing. Gate Unit Supply (20VDC) RB-GCT X1 Internal Supply (without galvanic isolation to power circuit) Anode Gate LED1 LED2 LED3 LED4 LED5 TurnOn Circuit Rx Logic Monitoring TurnOff Circuit CS SF Command Signal (Light) Cathode Status Feedback (Light) Tx Fig. 9 Block diagram RB-IGCT. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1231-01 Sep. 01 page 8 of 8 5SHZ 08F6000 Turn-on (VD > 0 V) di/dt Turn-off (VD > 0 V) VDM VD VD 0.9 VD 0.1 VD VG tdon IT IT CS 0.8 ITGQ 0.3 ITGQ CS tr tdoff tf VG Turn-off (VD < 0 V) IT VG Irr Qrr VD di/dt Fig. 10General current and voltage waveforms with RB-IGCT specific symbols. 1/2 Lcomm LS DUT1 + CDC LS RS CS Ld DUT2 1/2 Lcomm Fig. 11Test circuit. RS CS ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Doc. No. 5SYA1231-01 Sep. 01 Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email abbsem@ch.abb.com Internet www.abbsem.com |
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